Title: Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment
Authors: Hsiao, Chih-Jen
Minh-Thien-Huu Ha
Hsu, Ching-Yi
Lin, Yueh-Chin
Chang, Sheng-Po
Chang, Shoou-Jinn
Chang, Edward Yi
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
Issue Date: Sep-2016
Abstract: GaSb epitaxial layers were directly grown on GaAs substrates by metal-organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 degrees C, the strain induced by lattice mismatch was accommodated by 90 degrees dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.9.095502
ISSN: 1882-0778
DOI: 10.7567/APEX.9.095502
Volume: 9
Issue: 9
Appears in Collections:Articles