Title: A Film-Profile-Engineered 3-D InGaZnO Inverter Technology With Systematically Tunable Threshold Voltage
Authors: Lyu, Rong-Jhe
Lin, Horng-Chih
Li, Pei-Wen
Huang, Tiao-Yuan
Department of Electronics Engineering and Institute of Electronics
Keywords: Film profile engineering (FPE);InGaZnO (IGZO);inverter;logic gate;metal oxide (MO);thin-film transistors (TFTs);voltage gain
Issue Date: Sep-2016
Abstract: In this paper, a new depletion-load metal oxide-based inverter with 3-D structure is realized with film-profile-engineered InGaZnO (IGZO) thin-film transistors (TFTs). The proposed inverter possesses vertically stacked load and drive TFTs whose threshold voltage can be flexibly adjusted into a wide range of -2.3-1 V through merely adjusting the geometric parameters without the necessity of additional processes or masks. The 3-D IGZO inverters constructed through the proposed technology demonstrate full-swing switching with voltage gains up to 19 V/V under an operation voltage of 9 V. The 3-D inverters can not only reduce the footprint but also promote the resistance toward light-induced instability.
URI: http://dx.doi.org/10.1109/TED.2016.2585519
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2585519
Volume: 63
Issue: 9
Begin Page: 3533
End Page: 3539
Appears in Collections:Articles