Title: Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment
Authors: Chang, Po-Chun
Luc, Quang-Ho
Lin, Yueh-Chin
Liu, Shih-Chien
Lin, Yen-Ku
Sze, Simon M.
Chang, Edward Yi
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
Keywords: AlN;high-kappa dielectric;InGaAs MOSFET;interfacial passivation layer (IPL);NH3 plasma treatment;plasma-enhanced atomic layer deposition (PEALD)
Issue Date: Sep-2016
Abstract: We report a notable improvement in performance, electron transport, and reliability of HfO2/In0.53Ga0.47As nMOSFETs using a plasma-enhanced atomic layer deposition AlN interfacial passivation layer (IPL) and NH3 postremote plasma treatment (PRPT). The interface state density Dit decreased by approximately one order of magnitude from 6.1x10(12) to 4x10(11) cm(-2)eV(-1), and the border trap density N-bt also declined ten times from 2.8x10(19) to 2.7x10(18) cm(-3), resulting in the reduction of the accumulation frequency dispersion and eliminate the inversion hump in C-V characteristics, and thus improves the device performances. Furthermore, positive bias temperature instability stress indicates that the sample with the AlN IPL and NH3 PRPT is more reliable than the sample without any IPL and plasma treatment. During PBT stress, a smaller threshold voltage shift and less transconductance degradation were observed for the sample with the AlN IPL and NH3 PRPT. In addition, the maximum overdrive voltage for a ten-year operating lifetime increased from 0.19 to 0.41 V.
URI: http://dx.doi.org/10.1109/TED.2016.2593022
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2593022
Volume: 63
Issue: 9
Begin Page: 3466
End Page: 3472
Appears in Collections:Articles