Title: Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
Authors: Huynh, Sa Hoang
Minh Thien Huu Ha
Huy Binh Do
Quang Ho Luc
Yu, Hung Wei
Chang, Edward Yi
Department of Materials Science and Engineering
College of Electrical and Computer Engineering
Issue Date: 5-Sep-2016
Abstract: Highly lattice-mismatch (over 8%) ternary InxGa1-xSb alloy directly grown on GaAs substrates was demonstrated by metalorganic chemical vapor deposition (MOCVD). The influence of growth parameters, such as growth temperature, indium vapor composition, and V/III ratio, on the film properties was investigated, and it was found that the growth temperature has the strongest effect on the surface morphology and the crystal quality of the InxGa1-xSb epilayer. An optimized growth temperature of similar to 590 degrees C and a V/III ratio of 2.5 were used for the growth of the InxGa1-xSb epilayer on GaAs that displays a lower surface roughness. High-resolution transmission electron microscopy micrographs exhibit that InxGa1-xSb epilayer growth on GaAs was governed by the interfacial misfit dislocation growth mode. Furthermore, the variation of the intermixing layer thickness at the InxGa1-xSb/GaAs heterointerface was observed. These results provide an information of growing highly lattice-mismatched epitaxial material systems by MOCVD growth process. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4962640
ISSN: 0003-6951
DOI: 10.1063/1.4962640
Volume: 109
Issue: 10
Begin Page: 109
End Page: 112
Appears in Collections:Articles