Title: Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM
Authors: Pan, Chih-Hung
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Kuan-Chang
Chu, Tian-Jian
Lin, Wen-Yan
Chen, Min-Chen
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
Issue Date: 26-Sep-2016
Abstract: In this letter, we demonstrate completely different characteristics with different operating modes and analyze the electrical field effect to confirm the filament dissolution behavior. The device exhibited a larger memory window when using a single voltage sweep method during reset process rather than the traditional double sweep method. The phenomenon was verified by using fast I-V measurement to simulate the two operating methods. A better high resistance state (HRS) will be obtained with a very short rising time pulse, but quite notably, lower power consumption was needed. We proposed the electrical field effect to explain the phenomenon and demonstrate distribution by COMSOL simulation. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4963672
ISSN: 0003-6951
DOI: 10.1063/1.4963672
Volume: 109
Issue: 13
Appears in Collections:Articles