Title: Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design
Authors: Tsai, Szu-Ping
Hsu, Heng-Tung
Wuerfl, Joachim
Chang, Edward Yi
Department of Materials Science and Engineering
International College of Semiconductor Technology
Keywords: AlGaN/GaN;flip-chip (FC) devices;high-electron-mobility transistors (HEMTs);strain engineering;thermo-mechanical analysis
Issue Date: Oct-2016
Abstract: The piezoelectric polarization of the AlGaN/GaN high-electron-mobility transistors (HEMTs) is strongly related to the strain state in the active area. Therefore, understanding the strain behavior inside the channel is crucial to the device electrical performance improvement of devices. This paper, for the first time, reveals the potential of optimizing flip-chip structures with active-region bumps to modulate the strain state of the AlGaN/GaN HEMT for enhancing the piezoelectric effect. The thermo-mechanical strain is observed to be affected by the physical dimensions and the material properties of the package. Thus, incorporating device strain engineering into packaging design will be very important for GaN devices due to their strong piezoelectric effects.
URI: http://dx.doi.org/10.1109/TED.2016.2594043
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2594043
Volume: 63
Issue: 10
Begin Page: 3876
End Page: 3881
Appears in Collections:Articles