Title: Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs
Authors: Hou, Fu-Ju
Sung, Po-Jung
Hsueh, Fu-Kuo
Wu, Chien-Ting
Lee, Yao-Jen
Li, Yiming
Samukawa, Seiji
Hou, Tuo-Hung
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
Keywords: {111};gate-all-around (GAA);germanium (Ge);isotropic/anisotropic etching;nanowire (NW)
Issue Date: Oct-2016
Abstract: A feasible pathway to scale germanium (Ge) FETs in future technology nodes has been proposed using the tunable diamond-shaped Ge nanowire (NW). The Ge NW was obtained through a simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The different etching selectivity of surface orientations for Cl-2 and HBr was employed for the three-step isotropic/anisotropic/isotropic dry etching. The ratio of Cl-2 and HBr, mask width, and Ge recess depth were crucial for forming the nearly defect-free suspended Ge channel through effective removal of dislocations near the Si/Ge interface. This technique could also be applied for forming diamond-shaped Si NWs. The suspended diamond-shaped NW gate-all-around NWFETs feature excellent electrostatics, the favorable {111} surfaces along the < 110 > direction with high carrier mobility, and the nearly defect-free Ge channel. The pFET with a high I-ON/I-OFF ratio of 6 x 10(7) and promising nFET performance have been demonstrated successfully.
URI: http://dx.doi.org/10.1109/TED.2016.2597317
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2597317
Volume: 63
Issue: 10
Begin Page: 3837
End Page: 3843
Appears in Collections:Articles