標題: Impact of String Pattern on the Threshold-Voltage Spread of Program-Inhibited Cell in NAND Flash
作者: Chiu, Yung-Yueh
Aoki, Minoru
Yano, Masaru
Shirota, Riichiro
資訊工程學系
電信工程研究所
Department of Computer Science
Institute of Communications Engineering
關鍵字: NAND flash memory;program disturb;Fowler-Nordheim (FN) tunneling;hot-carrier injection (HCI)
公開日期: 七月-2016
摘要: An anomalous threshold-voltage (V-t) spread of the program-inhibited cell is investigated for the first time in NAND flash memory. The program disturb characteristics are studied by applying the program-inhibited stress on the Nth cell of the unselected bitline with various string patterns for the 0th to (N - 1)th cell, using the global self-boosting method. Distinguishing features of the variance of the number of injected electrons (sigma(2)(n)) into the floating gate are observed. The variance is proportional to the mean value of injected electrons ((n) over bar) times 10. The other is proportional to (n) over bar times 20 and occurs only when the (N - 1) th cell is programmed in a high Vt level and the other cells are in the erased state. A 3-D TCAD simulation reveals that the former case is attributed to Fowler-Nordheim tunneling from the insufficiently boosting channel, and the latter is explained by hot-electron injection owing to the strong lateral electric field between the Nth and (N - 1) th cells.
URI: http://dx.doi.org/10.1109/JEDS.2016.2565820
http://hdl.handle.net/11536/134145
ISSN: 2168-6734
DOI: 10.1109/JEDS.2016.2565820
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 4
Issue: 4
起始頁: 174
結束頁: 178
顯示於類別:期刊論文