Title: Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell String
Authors: Chou, Y. L.
Wang, Tahui
Lin, Mercator
Chang, Y. W.
Liu, Lenvis
Huang, S. W.
Tsai, W. J.
Lu, T. C.
Chen, K. C.
Lu, Chih-Yuan
Department of Electronics Engineering and Institute of Electronics
Keywords: Vertical NAND;RTN;trap position;pass voltage
Issue Date: Aug-2016
Abstract: We investigate the dependence of random telegraph noise (RTN) on a poly-silicon trap position in a 3D vertical channel and charge-trapping NAND flash cell string. We characterize RTN in read current of each cell of a string at different read and pass voltages. RTN characteristics resulting from a trap in a read cell or in a pass cell are differentiated. A method to identify a poly-silicon trap position in a NAND string is proposed. We perform the 3D TCAD simulation to calculate channel electron density in a string. Measured RTN characteristics can be explained by current-path percolation and channel carrier screening effects. The distribution of RTN amplitudes in NAND strings is characterized.
URI: http://dx.doi.org/10.1109/LED.2016.2585860
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2585860
Volume: 37
Issue: 8
Begin Page: 998
End Page: 1001
Appears in Collections:Articles