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dc.contributor.authorMeng, CCen_US
dc.contributor.authorChen, CHen_US
dc.contributor.authorChang, YWen_US
dc.contributor.authorHuang, GWen_US
dc.date.accessioned2014-12-08T15:18:38Z-
dc.date.available2014-12-08T15:18:38Z-
dc.date.issued2005-08-04en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20051955en_US
dc.identifier.urihttp://hdl.handle.net/11536/13407-
dc.description.abstractThe first fully integrated GaInP/GaAs heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (VCO) using the stacked-transformer LC tank is demonstrated at 5.43-5.31 GHz with low-phase-noise performance. The stacked-transformers are formed by two interconnect metal layers and possess good electrical properties at high frequencies because of the semi-insulating GaAs substrate. The quadrature VCO at 5.38 GHz has phase noise of -127.4 dBc/Hz at 1 MHz offset frequency, output power of -4 dBm and a figure of merit (FOM) -191 dBc/Hz.en_US
dc.language.isoen_USen_US
dc.title5.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformersen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20051955en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume41en_US
dc.citation.issue16en_US
dc.citation.spage906en_US
dc.citation.epage908en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000233419900017-
dc.citation.woscount7-
Appears in Collections:Articles