標題: Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays
作者: Aluguri, Rakesh
Tseng, Tseung-Yuen
交大名義發表
National Chiao Tung University
關鍵字: Cross bar RRAM;self-rectifying cells;selector devices
公開日期: 1-Sep-2016
摘要: Cross point RRAM arrays is the emerging area for future memory devices due to their high density, excellent scalability. Sneak path problem is the main disadvantage of cross point structures which needed to be overcome to produce real devices. Various self-rectifying cells like complementary resistive cell, hybrid RRAM cell, valence modulated conductive oxide RRAM and non-linear resistive memory with tunneling barrier, etc., are proposed to overcome the sneak path problem and to achieve the high density with good on/off ratio. However, it is challenging to fabricate the self-rectifying cells operating at low program/erase voltages with high non-linearity for both read and write operations and exhibiting good retention and endurance characteristics at the same time for a single device. 1S1R devices are more attractive than SRC due to large optimization possibilities to obtain better device performance as they have separate selector cell and memory cell which decouples the control parameters. Various kinds of selector devices like Si-based selector, metal-oxide based selector, threshold switch selector, mixed ionic-electronic conduction selector etc., are under intense research to obtain the best performance cross point memory devices. In this paper, we have briefly discussed about recent progress on various self-rectifying cells and selector devices for obtaining 3-D stackable cross point memory arrays.
URI: http://dx.doi.org/10.1109/JEDS.2016.2594190
http://hdl.handle.net/11536/134065
ISSN: 2168-6734
DOI: 10.1109/JEDS.2016.2594190
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 4
Issue: 5
起始頁: 294
結束頁: 306
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