Title: Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications
Authors: Hsu, Hsiao-Hsuan
Chiou, Ping
Cheng, Chun-Hu
Yen, Shiang-Shiou
Tung, Chien-Hung
Chang, Chun-Yen
Lai, Yu-Chien
Li, Hung-Wei
Chang, Chih-Pang
Lu, Hsueh-Hsing
Chuang, Ching-Sang
Lin, Yu-Hsin
Department of Electronics Engineering and Institute of Electronics
Keywords: Crystalline phase;indium-gallium-zinc oxide (IGZO);thin-film transistor (TFT);titanium oxide
Issue Date: Jun-2015
Abstract: This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of <5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade, and a high mobility of 13.7 cm(2)/V s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.
URI: http://dx.doi.org/10.1109/JDT.2014.2353091
ISSN: 1551-319X
DOI: 10.1109/JDT.2014.2353091
Volume: 11
Issue: 6
Begin Page: 506
End Page: 511
Appears in Collections:Articles