Title: Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers
Authors: Chen, Shuo-Wei
Li, Heng
Lu, Tien-Chang
光電工程學系
Department of Photonics
Issue Date: Apr-2016
Abstract: The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
URI: http://dx.doi.org/10.1063/1.4947299
http://hdl.handle.net/11536/133816
ISSN: 2158-3226
DOI: 10.1063/1.4947299
Journal: AIP ADVANCES
Volume: 6
Issue: 4
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