Title: High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate
Authors: Wu, Di-Cheng
Pan, You-Wei
Wu, Jenq-Shinn
Lin, Shih-Wei
Lin, Sheng-Di
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
Issue Date: 25-Apr-2016
Abstract: We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Omega/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4948251
ISSN: 0003-6951
DOI: 10.1063/1.4948251
Volume: 108
Issue: 17
Appears in Collections:Articles