Title: Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
Authors: Liu, Hsi-Wen
Chang, Ting-Chang
Tsai, Jyun-Yu
Chen, Ching-En
Liu, Kuan-Ju
Lu, Ying-Hsin
Lin, Chien-Yu
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Ye, Yi-Han
Department of Electronics Engineering and Institute of Electronics
Issue Date: 25-Apr-2016
Abstract: This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4947439
ISSN: 0003-6951
DOI: 10.1063/1.4947439
Volume: 108
Issue: 17
Appears in Collections:Articles