Title: High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
Authors: Chiu, Yu Sheng
Liao, Jen Ting
Lin, Yueh Chin
Liu, Shin Chien
Lin, Tai Ming
Iwai, Hiroshi
Kakushima, Kuniyuki
Chang, Edward Yi
Department of Materials Science and Engineering
Institute of Imaging and Biomedical Photonics
Department of Electronics Engineering and Institute of Electronics
Issue Date: May-2016
Abstract: High-kappa cerium oxide (CeO2) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance-voltage (C-V) measurement results, the dielectric constant of the CeO2 film was 25.2. The C-V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density (D-it) was calculated to be 5.5 x 10(11) eV(-1)cm(-2) at 150 degrees C. A CeO2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87 mV/decade, a high ON/OFF drain current ratio (I-ON/I-OFF) of 1.14 X 10(9), and a low gate leakage current density (J(leakage)) of 2.85 X 10(-9)Acm(-2) with an improved dynamic ON-resistance (R-ON), which is about one order of magnitude lower than that of a conventional HEMT. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.55.051001
ISSN: 0021-4922
DOI: 10.7567/JJAP.55.051001
Volume: 55
Issue: 5
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