Title: Short wavelength enhanced phototransistor with n-doped porous silicon layer
Authors: Wang, Yao-Chin
Lin, Bor-Shyh
Yang, Zu-Po
College of Photonics
Issue Date: 26-May-2016
Abstract: A phototransistor with aluminium (Al)/porous silicon (Si)/epitaxial-Si structures was proposed and was fabricated and characterised with short wavelength enhanced operating. We proposed the short wavelength response of the Si-based thin film phototransistor; it can be enhanced by introducing thin porous Si (PS) layer as the base region of transistor. The porous process of device manufacture is suitable for applications in design of visible-light sensitive phototransistors. Experimental results showed that the short wavelength responses in the developed devices were enhanced as compared with the Si-based homojunction transistors, this comparably medium optical gain indicated that the developed Al/PSi/epitaxial-Si heterojunction thin film phototransistor got potential for practical Si-based optical-electron integrated-circuit and biophotonics applications.
URI: http://dx.doi.org/10.1049/el.2016.0412
ISSN: 0013-5194
DOI: 10.1049/el.2016.0412
Volume: 52
Issue: 11
Begin Page: 947
End Page: 948
Appears in Collections:Articles