標題: Investigation on seal-ring rules for IC product reliability in 0.25-mu m CMOS technology
作者: Chen, SH
Ker, MD
電機學院
College of Electrical and Computer Engineering
公開日期: 1-九月-2005
摘要: The distance between active region and the seal-ring location has been investigated in a 0.25 mu m CMOS process. From the experimental results, this distance can be shrunk to only 5 pm without increasing leakage current and decreasing ESD robustness of the ESD protection devices after reliability tests of High-Accelerated Stress Test (HAST) and Temperature Cycling Test (TCT). (c) 2005 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2005.07.012
http://hdl.handle.net/11536/13376
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2005.07.012
期刊: MICROELECTRONICS RELIABILITY
Volume: 45
Issue: 9-11
起始頁: 1311
結束頁: 1316
顯示於類別:會議論文


文件中的檔案:

  1. 000232253500007.pdf