Title: High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer
Authors: Tzou, An-Jye
Lin, Da-Wei
Yu, Chien-Rong
Li, Zhen-Yu
Liao, Yu-Kuang
Lin, Bing-Cheng
Huang, Jhih-Kai
Lin, Chien-Chung
Kao, Tsung Sheng
Kuo, Hao-Chung
Chang, Chun-Yen
Department of Electrophysics
Department of Photonics
Issue Date: 30-May-2016
Abstract: In this study, high-performance InGaN-based green light-emitting diodes (LEDs) with a quaternary InAlGaN/GaN superlattice electron blocking layer (QSL-EBL) have been demonstrated. The band structural simulation was employed to investigate the electrostatic field and carriers distribution, show that the efficiency and droop behavior can be intensively improved by using a QSL-EBL in LEDs. The QSL-EBL structure can reduce the polarization-related electrostatic fields in the multiple quantum wells (MQWs), leading to a smoother band diagram and a more uniform carriers distribution among the quantum wells under forward bias. In comparison with green LEDs with conventional bulk-EBL structure, the light output power of LEDs with QSL-EBL was greatly enhanced by 53%. The efficiency droop shows only 30% at 100 A/cm(2) comparing to its peak value, suggesting that the QSL-EBL LED is promising for future white lighting with high performance. (C) 2016 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.24.011387
ISSN: 1094-4087
DOI: 10.1364/OE.24.011387
Volume: 24
Issue: 11
Begin Page: 1387
End Page: 1395
Appears in Collections:Articles