|標題:||Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||Nonvolatile memory;Illumination effect;Gadolinium;Silicon oxide;RRAM|
|摘要:||To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (lambda = 400 nm) and red-light (lambda = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.|
|期刊:||NANOSCALE RESEARCH LETTERS|
|Appears in Collections:||Articles|
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