Title: 32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction
Authors: Hou, Fu-Ju
Sung, Po-Jung
Hsueh, Fu-Kuo
Wu, Chien-Ting
Lee, Yao-Jen
Chang, Mao-Nang
Li, Yiming
Hou, Tuo-Hung
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
Keywords: Microwave annealing (MWA);solid-phase epitaxial regrowth (SPER);tunnel FET (TFET)
Issue Date: May-2016
Abstract: Microwave annealing (MWA) activates dopants through solid-phase epitaxial regrowth with low thermal budget. Optimizing the microwave power during MWA is capable of realizing low defect density at the junction, suppressing the dopant diffusion, and mitigating the straggle effect of ion implantation. These favorable features of MWA facilitate the formation of extremely abrupt junction profiles in tunnel FETs (TFETs). In conjunction with the improved gate-to-channel controllability of the multiple-gate (MG) structure, we demonstrate high-performance lateral n-type Si-TFETs using a CMOS-compatible process flow with excellent band-to-band tunneling efficiency and device scalability. The 32-nm MG Si-TFET shows promising characteristics, including a high ON-state current of 41.3 mu A/mu m, a large current ON/OFF ratio of > 5 x 10(7), and minimal short-channel effect using V-G = 2 V and V-D = 1 V.
URI: http://dx.doi.org/10.1109/TED.2015.2466236
ISSN: 0018-9383
DOI: 10.1109/TED.2015.2466236
Volume: 63
Issue: 5
Begin Page: 1808
End Page: 1813
Appears in Collections:Articles