標題: Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal Gate
作者: Hsu, Ching-Yi
Chang, Chun-Yen
Chang, Edward Yi
Hu, Chenming
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: InAs/GaSb;tunneling FET (TFET);quantum well;surface states;Fermi pinning;non-uniformity;dual-metal gate;steep turn-on
公開日期: 1-Mar-2016
摘要: Non-uniformity in electric field causes early onset of tunneling near the edge of InAs/GaSb hetero-junction tunneling field-effect transistors. When a small area, often an edge, of the tunneling junction has a lower turn-on voltage, the steep switching characteristic is degraded. Fermi pinning at InAs surface greatly worsen the uniformity. We propose a dual-metal gate structure to address the non-uniformity issue. With proper choice of work functions, the dual-metal gate structure can effectively suppress the early onset of edge tunneling and significantly improve the subthreshold swing.
URI: http://dx.doi.org/10.1109/JEDS.2015.2514060
http://hdl.handle.net/11536/133496
ISSN: 2168-6734
DOI: 10.1109/JEDS.2015.2514060
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 4
Issue: 2
起始頁: 60
結束頁: 65
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