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dc.contributor.authorTiwari, Nidhien_US
dc.contributor.authorChauhan, Ram Narayanen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorHuang, Yi-Paien_US
dc.date.accessioned2017-04-21T06:56:48Z-
dc.date.available2017-04-21T06:56:48Z-
dc.date.issued2016-04en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2016.2525799en_US
dc.identifier.urihttp://hdl.handle.net/11536/133441-
dc.description.abstractZinc oxide (ZnO) cosputtered indium-gallium-ZnO (IGZO) and pure IGZO thin films have been deposited at room temperature by dual RF magnetron sputtering and annealed in argon (Ar), nitrogen (N-2), and oxygen (O-2) ambients. The beneficial effect of various annealing environments appears because of a reorganization of the amorphous network with controlling the defect chemistry in the films as systematically investigated by photoluminescence analysis. The various defects, such as zinc vacancy (V-Zn), zinc interstitial (Zn-i), and oxygen vacancy (V-O), were remarkably enhanced in argon, while suppressed in N-2 and O-2 ambients-leading more reliable cosputtered structure than the IGZO to be utilized in thin-film transistors (TFTs) fabrication for transparent electronics. Furthermore, the ZnO cosputtered IGZO TFTs were also fabricated and systematically investigated the impact of various annealing environments on their performance characteristics. The characteristics were improved in N-2 ambient-displaying the field-effect mobility (mu(FE)) of 16.10 cm(2)/Vs, the threshold voltage (V-th) of 1.50 V, the subthreshold swing of 0.21 V/decade, and the negative bias illumination stress shifting of -2.75 V.en_US
dc.language.isoen_USen_US
dc.subjectPhotoluminescence (PL)en_US
dc.subjectsputteringen_US
dc.subjectthin filmsen_US
dc.subjectthin-film transistor (TFT)en_US
dc.titlePhotoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditionsen_US
dc.identifier.doi10.1109/TED.2016.2525799en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume63en_US
dc.citation.issue4en_US
dc.citation.spage1578en_US
dc.citation.epage1581en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000373063800026en_US
Appears in Collections:Articles