標題: Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
作者: Huang, HW
Chu, JT
Kao, CC
Hseuh, TH
Lu, TC
Kuo, HC
Wang, SC
Yu, CC
光電工程學系
Department of Photonics
公開日期: 1-九月-2005
摘要: This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.
URI: http://dx.doi.org/10.1088/0957-4484/16/9/071
http://hdl.handle.net/11536/13342
ISSN: 0957-4484
DOI: 10.1088/0957-4484/16/9/071
期刊: NANOTECHNOLOGY
Volume: 16
Issue: 9
起始頁: 1844
結束頁: 1848
顯示於類別:期刊論文


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  1. 000232089500071.pdf