標題: A Study on the Diffuse Mechanism and the Barrier Property of Copper Manganese Alloy on Tantalum
作者: Su, Ying-Sen
Lee, Wen-Hsi
Chang, Shih-Chieh
Wang, Ying-Lang
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: Barrier;self-formed;annealing;CuMn alloy;Ta
公開日期: 五月-2015
摘要: In this paper, the electrical and material properties of CuMn/silicon oxide (SiO2) and CuMn/tantalum (Ta)/SiO2 were investigated, and an optimized concentration of Mn in the CuMn alloy as barrier layers in these two structures was also determined. CuMn alloy (0 similar to 10 atomic % Mn) deposited on SiO2 and Ta were used in this paper. A diffusion barrier layer self-formed at the interface during annealing, and the growth behavior was found to follow a logarithmic rate law. The microstructures of the CuMn films were analyzed by transmission electron microscopy and could be correlated with the electrical properties of the CuMn films. After thermal treatment, only Cu-5 at.% Mn/ SiO2 successfully avoided the diffusion of Cu atoms. Thermal stability of the films grown on Ta/SiO2 was found to be better than that on SiO2. When a Ta layer was added, the Mn atoms diffused not only to the interface, but also to the grain boundaries in the Ta layer and the interface between Ta and SiO2. This phenomenon could be explained by the surface energy. As the thickness of CuMn shrunk from 150 to 50 nm and the sample was covered with a 100-nm-thick Cu layer, the amount of Mn atoms increased at the interface of CuMn/Ta. This is because the Cu layer had higher chemical potential which induced the Mn atoms to move toward the Ta layer and reduced the amount of Mn atoms in Cu after heat treatment.
URI: http://dx.doi.org/10.1109/JEDS.2014.2358588
http://hdl.handle.net/11536/133377
ISSN: 2168-6734
DOI: 10.1109/JEDS.2014.2358588
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 3
Issue: 3
起始頁: 284
結束頁: 290
顯示於類別:期刊論文