標題: Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates
作者: Lyu, Rong-Jhe
Lin, Horng-Chih
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Metal oxide;film profile engineering (FPE);ZnO;thin-film transistor
公開日期: 五月-2015
摘要: By virtue of the film-profile engineering scheme and properly designed device structure, ZnO TFTs with discrete bottom gates and sub-micron channels were fabricated and characterized. In the fabrication, a suspended bridge constructed over the bottom gate is used to tailor the profile of subsequently deposited films. Superior electrical characteristics in terms of ultrahigh ON/OFF current ratio (similar to 10(10)), steep sub-threshold swing (66 similar to 108 mV/dec), and very low off-state leakage current are demonstrated with the fabricated devices. Effects of channel lengths on the device characteristics are also explored. Because of more effective shadowing of the depositing species with a longer suspended bridge, the deposited films become thinner at the central channel. As a result, the device shows more positive turn-on voltage and better subthreshold swing with increasing channel length.
URI: http://dx.doi.org/10.1109/JEDS.2015.2396687
http://hdl.handle.net/11536/133376
ISSN: 2168-6734
DOI: 10.1109/JEDS.2015.2396687
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 3
Issue: 3
起始頁: 260
結束頁: 266
顯示於類別:期刊論文