標題: Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels
作者: Wu, YC
Chang, TC
Liu, PT
Chou, CW
Wu, YC
Tu, CH
Chang, CY
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: dual-gate;metal-induced lateral crystallization (MILC);nanowire;thin-film transistor (TFT)
公開日期: 1-九月-2005
摘要: This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple nanowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (> 10(-8) A), because of the field emission of carriers through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the electrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio.
URI: http://dx.doi.org/10.1109/LED.2005.854382
http://hdl.handle.net/11536/13324
ISSN: 0741-3106
DOI: 10.1109/LED.2005.854382
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 9
起始頁: 646
結束頁: 648
顯示於類別:期刊論文


文件中的檔案:

  1. 000231577900016.pdf