標題: Drain/gate-voltage-dependent on-current and off-current instabilities in polycrystalline silicon thin-film transistors under electrical stress
作者: Wang, SD
Chang, TY
Lo, WH
Sang, JY
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: on-current (I(on));off-current (I(off));instability;poly-Si TFT;electrical stress
公開日期: 1-Sep-2005
摘要: The On-current (I(on)) and Off-current (I(off)) instabilities of polycrystalline silicon thin-film transistors (poly-Si TFTs) were investigated under various stress conditions. The stress-induced device degradation was studied by measuring the dependences Of I(on) and I(off) on the drain/gate voltages. From the results, dissimilar variations in I(on) and I(off) were observed. The differences can be attributed to the variances in the amount of trap charges in the gate oxide and the spatial distributions of the trap states generated in the poly-Si channel. A comprehensive model for the degradation Of I(on) and I(off) in poly-Si TFTs under various electrical stress conditions was suggested.
URI: http://dx.doi.org/10.1143/JJAP.44.6435
http://hdl.handle.net/11536/13309
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.6435
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 9A
起始頁: 6435
結束頁: 6440
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