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dc.contributor.authorLuo, Zhicongen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2017-04-21T06:56:42Z-
dc.date.available2017-04-21T06:56:42Z-
dc.date.issued2016-12en_US
dc.identifier.issn1932-4545en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TBCAS.2015.2512443en_US
dc.identifier.urihttp://hdl.handle.net/11536/133081-
dc.description.abstractThis paper presents a 4 x V-DD neuro-stimulator in a 0.18-mu m 1.8 V/3.3 V CMOS process. The self-adaption bias technique and stacked MOS configuration are used to prevent transistors from the electrical overstress and gate-oxide reliability issue. A high-voltage-tolerant level shifter with power-on protection is used to drive the neuro-stimulator The reliability measurement of up to 100 million periodic cycles with 3000-mu A biphasic stimulations in 12-V power supply has verified that the proposed neuro-stimulator is robust. Precise charge balance is achieved by using a novel current memory cell with the dual calibration loops and leakage current compensation. The charge mismatch is down to 0.25% over all the stimulus current ranges (200-300 mu A) The residual average dc current is less than 6.6 nA after shorting operation.en_US
dc.language.isoen_USen_US
dc.subjectCharge balanceen_US
dc.subjectcurrent memory cellen_US
dc.subjecthigh-voltage-toleranten_US
dc.subjectleakage current compensationen_US
dc.subjectlevel shifteren_US
dc.subjectstimulatoren_US
dc.titleA High-Voltage-Tolerant and Precise Charge-Balanced Neuro-Stimulator in Low Voltage CMOS Processen_US
dc.identifier.doi10.1109/TBCAS.2015.2512443en_US
dc.identifier.journalIEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMSen_US
dc.citation.volume10en_US
dc.citation.issue6en_US
dc.citation.spage1087en_US
dc.citation.epage1099en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department生醫電子轉譯研究中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentBiomedical Electronics Translational Research Centeren_US
dc.identifier.wosnumberWOS:000392417000006en_US
Appears in Collections:Articles