標題: Effect of nitrogen incorporation into InAs layer in InAs/InGaAs self-assembled quantum dots
作者: Chen, JF
Hsiao, RS
Chen, YC
Chen, YP
Hsieh, MT
Wang, JS
Chi, JY
電子物理學系
Department of Electrophysics
關鍵字: InAs quantum dots;nitrogen incorporation;deep traps;admittance spectroscopy
公開日期: 1-九月-2005
摘要: We present the results of nitrogen. incorporation into the InAs layer in InAs/InGaAs quantum dots (QDs). We show that this incorporation causes an asymmetric photoluminescence (PL) line shape and abnormally, large redshift of the PL peak from the quantum dots as temperature increases. In addition, this incorporation causes a large series resistance and a rapid increase in reverse current at a bias corresponding to the QD region. This effect is due to the formation of a deep trap at 0.34-0.41 eV, which depletes the carriers in the QD region. This depletion gives rise to a geometric resistance-capacitance time-constant effect for the ac conductivity of the free electrons in the top GaAs layer. This trap markedly alters the emission properties of the QD structure. The ac conductivity of the QD structure is governed by the thermal activation of trapped electrons rather than the electron emission from the QD confined states. This incorporation significantly increases the electron emission time from the QD region and, thus, can be used intentionally to modify the emission properties of the QD structure.
URI: http://dx.doi.org/10.1143/JJAP.44.6395
http://hdl.handle.net/11536/13307
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.6395
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 9A
起始頁: 6395
結束頁: 6398
顯示於類別:期刊論文


文件中的檔案:

  1. 000232260700006.pdf