標題: Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations
作者: Meng, CC
Su, JY
Yang, SM
電信工程研究所
Institute of Communications Engineering
關鍵字: GaAs MESFET;small signal equivalent circuit and 2-D device simulation
公開日期: 1-九月-2005
摘要: The gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior, GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter C(gs) while gate contour affects C(gd). The breakdown voltage has strong dependence on gate contour and little dependence on gage length.
URI: http://dx.doi.org/10.1143/JJAP.44.6389
http://hdl.handle.net/11536/13306
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.6389
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 9A
起始頁: 6389
結束頁: 6394
顯示於類別:期刊論文


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  1. 000232260700005.pdf