Title: Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors
Authors: Tsao, Yu-Ching
Chang, Ting-Chang
Chen, Hua-Mao
Chen, Bo-Wei
Chiang, Hsiao-Cheng
Chen, Guan-Fu
Chien, Yu-Chieh
Tai, Ya-Hsiang
Hung, Yu-Ju
Huang, Shin-Ping
Yang, Chung-Yi
Chou, Wu-Ching
Department of Electrophysics
Department of Photonics
Issue Date: 9-Jan-2017
Abstract: This work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO4) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4973856
ISSN: 0003-6951
DOI: 10.1063/1.4973856
Volume: 110
Issue: 2
Appears in Collections:Articles