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dc.contributor.authorYeh, Tien-Tienen_US
dc.contributor.authorShirai, Hidetoen_US
dc.contributor.authorTu, Chien-Mingen_US
dc.contributor.authorFuji, Takaoen_US
dc.contributor.authorKobayashi, Takayoshien_US
dc.contributor.authorLuo, Chih-Weien_US
dc.date.accessioned2019-04-03T06:37:13Z-
dc.date.available2019-04-03T06:37:13Z-
dc.date.issued2017-01-11en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep40492en_US
dc.identifier.urihttp://hdl.handle.net/11536/133039-
dc.description.abstractIn this study, we carried out 800-nm pump and ultra-broadband mid-infrared (MIR) probe spectroscopy with high time-resolution (70 fs) in bulk Ge. By fitting the time-resolved difference reflection spectra [Delta R(omega)/R(omega)] with the Drude model in the 200-5000 cm(-1) region, the time-dependent plasma frequency and scattering rate have been obtained. Through the calculation, we can further get the time-dependent photoexcited carrier concentration and carrier mobility. The Auger recombination essentially dominates the fast relaxation of photoexcited carriers within 100 ps followed by slow relaxation due to diffusion. Additionally, a novel oscillation feature is clearly found in time-resolved difference reflection spectra around 2000 cm(-1) especially for high pump fluence, which is the Lorentz oscillation lasting for about 20 ps due to the Coulomb force exerted just after the excitation.en_US
dc.language.isoen_USen_US
dc.titleUltrafast carrier dynamics in Ge by ultra-broadband mid-infrared probe spectroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep40492en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000391592200001en_US
dc.citation.woscount5en_US
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