Title: Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
Authors: Wu, JW
You, JW
Ma, HC
Cheng, CC
Hsu, CF
Chang, CS
Huang, GW
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: low-frequency noise;random telegraph signal;ultrathin oxide MOSFET;valence-band tunneling
Issue Date: 1-Sep-2005
Abstract: Low-frequency flicker noise in analog n-MOSFETs with 15-angstrom gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model.
URI: http://dx.doi.org/10.1109/TED.2005.854264
http://hdl.handle.net/11536/13303
ISSN: 0018-9383
DOI: 10.1109/TED.2005.854264
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 52
Issue: 9
Begin Page: 2061
End Page: 2066
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