標題: Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
作者: Wu, JW
You, JW
Ma, HC
Cheng, CC
Hsu, CF
Chang, CS
Huang, GW
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: low-frequency noise;random telegraph signal;ultrathin oxide MOSFET;valence-band tunneling
公開日期: 1-九月-2005
摘要: Low-frequency flicker noise in analog n-MOSFETs with 15-angstrom gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model.
URI: http://dx.doi.org/10.1109/TED.2005.854264
http://hdl.handle.net/11536/13303
ISSN: 0018-9383
DOI: 10.1109/TED.2005.854264
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 52
Issue: 9
起始頁: 2061
結束頁: 2066
顯示於類別:期刊論文


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  1. 000231542100019.pdf