標題: Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
作者: Shen, Wen-Wei
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Through-silicon via (TSV);Three-dimensional integrated circuit (3D IC)
公開日期: 19-一月-2017
摘要: 3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.
URI: http://dx.doi.org/10.1186/s11671-017-1831-4
http://hdl.handle.net/11536/133029
ISSN: 1556-276X
DOI: 10.1186/s11671-017-1831-4
期刊: NANOSCALE RESEARCH LETTERS
Volume: 12
顯示於類別:期刊論文