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dc.contributor.authorLin, CMen_US
dc.contributor.authorChuu, DSen_US
dc.contributor.authorChou, WCen_US
dc.contributor.authorXu, JAen_US
dc.contributor.authorHuang, Een_US
dc.contributor.authorHu, JZen_US
dc.contributor.authorPei, JHen_US
dc.date.accessioned2014-12-08T15:01:14Z-
dc.date.available2014-12-08T15:01:14Z-
dc.date.issued1998en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://hdl.handle.net/11536/132-
dc.description.abstractThe energy-dispersive X-ray-diffraction (EDXD) and Raman spectroscopy were employed to study the pressure induced phase transitions of Zn0.84Fe0.16Se crystal up to 21.0 and 32.0 GPa, respectively. A semiconductor-metal transition was identified by EDXD and Raman spectroscopic methods at 11.4 +/- 0.5 GPa. Other two phase transitions were found only in the Raman scattering study below 11.4 GPa. In addition, three unidentified Raman peaks were still observable above the metallization pressure. The existence of Fe impurity in the ZnSe up to a concentration of 0.16 reduced prominently the semiconductor-metal phase transition pressure. For Raman works, the three unidentified Raman peaks of Zn0.84Fe0.16Se above 10.9 GPa are possibly the TO modes in the thin surface of the high pressure metallic phase. (C) 1998 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectsemiconductorsen_US
dc.subjectphase transitionsen_US
dc.subjecthigh pressureen_US
dc.subjectsynchrotron radiationen_US
dc.titlePhase transitions of Zn0.84Fe0.16Se under high-pressureen_US
dc.typeArticleen_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume107en_US
dc.citation.issue5en_US
dc.citation.spage217en_US
dc.citation.epage221en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000074407300004-
dc.citation.woscount7-
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