標題: Enhanced Conversion Efficiency of III-V Triple-junction Solar Cells with Graphene Quantum Dots
作者: Lin, Tzu-Neng
Santiago, Svette Reina Merden S.
Zheng, Jie-An
Chao, Yu-Chiang
Yuan, Chi-Tsu
Shen, Ji-Lin
Wu, Chih-Hung
Lin, Cheng-An J.
Liu, Wei-Ren
Cheng, Ming-Chiang
Chou, Wu-Ching
電子物理學系
Department of Electrophysics
公開日期: 16-十二月-2016
摘要: Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% enhancement compared to the cell without GQDs. On the basis of time-resolved photoluminescence, external quantum efficiency, and work-function measurements, we suggest that the efficiency enhancement in the InGaP/InGaAs/Ge triple-junction solar cells is primarily caused by the carrier injection from GQDs to the
URI: http://dx.doi.org/10.1038/srep39163
http://hdl.handle.net/11536/132966
ISSN: 2045-2322
DOI: 10.1038/srep39163
期刊: SCIENTIFIC REPORTS
Volume: 6
顯示於類別:期刊論文