標題: Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
作者: Liu, Po-Tsun
Chang, Chih-Hsiang
Fuh, Chur-Shyang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: We studied the influence of the backchannel passivation layer (BPL) on the ambient stability of amorphous indium-zinc-tin-oxide thin-film transistors (a-IZTO TFTs), in which atomic layer deposited (ALD) Al2O3 films and plasma-enhanced chemical vapor deposited (PECVD) SiO2 films were separately used to be the channel passivation layers. It was observed that the BPL deposition process strongly affects device performance and stability. From the results of the extracted activation energy (Eact), the Al2O3 passivation layer can reduce the trap density in localized tail states, which improves the mobility of a-IZTO TFTs. Compared with the SiO2 passivation layer, the Al2O3 passivation process effectively suppresses H injection into the a-IZTO channel layer underneath with secondary ion mass spectrometer analysis. In addition, it is found that the a-IZTO TFT with the Al2O3 passivation layer can enhance resistance against negative bias illumination stress (NBIS), making it reliable for realistic operation in flat panel displays.
URI: http://dx.doi.org/10.1039/c6ra22423g
http://hdl.handle.net/11536/132906
ISSN: 2046-2069
DOI: 10.1039/c6ra22423g
期刊: RSC ADVANCES
Volume: 6
Issue: 108
起始頁: 106374
結束頁: 106379
顯示於類別:期刊論文