標題: A numerical study of dc characteristics of HEMT with p-type delta-doped barrier
作者: Chang, Y
Kuo, YK
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-九月-2005
摘要: The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type delta-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The simulation results indicate that a HEMT with such a structure has a higher gate turn-on voltage, better carrier confinement that results in a lower voltage-dependent transconductance, and a larger breakdown voltage when compared with the typical HEMT. The simulation results also suggest that this structure is beneficial for linear and large-signal application.
URI: http://dx.doi.org/10.1007/s00339-004-2899-0
http://hdl.handle.net/11536/13284
ISSN: 0947-8396
DOI: 10.1007/s00339-004-2899-0
期刊: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume: 81
Issue: 4
起始頁: 877
結束頁: 879
顯示於類別:期刊論文


文件中的檔案:

  1. 000230267700039.pdf