|標題:||Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||Indium-tin-oxide (ITO);nitride gas (N-2);oxygen gas (O-2);resistive random access memory (RRAM)|
|摘要:||In this paper, indium-tin-oxide (ITO) was used to act as both insulator and top electrode in resistive random access memory (RRAM) on identical bottom substrates. This is achieved by cosputtering an ITO target with nitride (N-2) or oxygen (O-2) gas as the insulator; then capping by an ITO electrode, such that both the rectifier and RRAM characteristics can be achieved before and after a forming process, respectively. In contrast, using pure ITO as an insulator does not exhibit RRAM behavior. To verify the rectifier and RRAM characteristics, material analyses and electrical measurements at various temperatures were conducted. Reliability tests including retention and endurance were also applied to verify the resistance switching stability. Finally, the rectifier and RRAM conduction models were proposed to examine the resistance switching behaviors. By applying the ITO material as both electrode and insulator, the resistance switching characteristic with high reliability is thus obtained.|
|期刊:||IEEE TRANSACTIONS ON ELECTRON DEVICES|
|Appears in Collections:||Articles|