標題: Robustness of a Topologically Protected Surface State in a Sb2Te2Se Single Crystal
作者: Lee, Chao-Kuei
Cheng, Cheng-Maw
Weng, Shih-Chang
Chen, Wei-Chuan
Tsuei, Ku-Ding
Yu, Shih-Hsun
Chou, Mitch Ming-Chi
Chang, Ching-Wen
Tu, Li-Wei
Yang, Hung-Duen
Luo, Chih-Wei
Gospodinov, Marin M.
電子物理學系
Department of Electrophysics
公開日期: 18-Nov-2016
摘要: A topological insulator (TI) is a quantum material in a new class with attractive properties for physical and technological applications. Here we derive the electronic structure of highly crystalline Sb2Te2Se single crystals studied with angle-resolved photoemission spectra. The result of band mapping reveals that the Sb2Te2Se compound behaves as a p-type semiconductor and has an isolated Dirac cone of a topological surface state, which is highly favored for spintronic and thermoelectric devices because of the dissipation-less surface state and the decreased scattering from bulk bands. More importantly, the topological surface state and doping level in Sb2Te2Se are difficult to alter for a cleaved surface exposed to air; the robustness of the topological surface state defined in our data indicates that this Sb2Te2Se compound has a great potential for future atmospheric applications.
URI: http://dx.doi.org/10.1038/srep36538
http://hdl.handle.net/11536/132811
ISSN: 2045-2322
DOI: 10.1038/srep36538
期刊: SCIENTIFIC REPORTS
Volume: 6
起始頁: 0
結束頁: 0
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