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dc.contributor.authorLu, Ying-Hsinen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorHo, Szu-Hanen_US
dc.contributor.authorChen, Ching-Enen_US
dc.contributor.authorTsai, Jyun-Yuen_US
dc.contributor.authorLiu, Kuan-Juen_US
dc.contributor.authorLiu, Xi-Wenen_US
dc.contributor.authorLin, Chien-yuen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorCheng, Osberten_US
dc.contributor.authorHuang, Cheng-Tungen_US
dc.contributor.authorYen, Wei-Tingen_US
dc.date.accessioned2017-04-21T06:56:20Z-
dc.date.available2017-04-21T06:56:20Z-
dc.date.issued2016-12-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2016.09.062en_US
dc.identifier.urihttp://hdl.handle.net/11536/132770-
dc.description.abstractThis study investigates how different metal gate fabrication methods induce variations in the defects which result from nitrogen diffusing into the hafnium oxide layer in metal-oxide-semiconductor field effect transistors (MOSFETs). By using the different fabrication methods of pre-TaN, post-TaN and post-TiN annealing, the work-function difference between the gate material and the semiconductor can be adjusted, leading to apparent differences in threshold voltage (V-th). In addition, the results of slow and fast I-V NBTI measurements show that the amount of the bulk trapping in the post-TiN device is the highest, followed by the post-TaN device and then the pre-TaN device. In addition, a nitrogen interstitial defect phenomenon, resulting in a temporary shift of threshold voltage (V-th) which is highest in the post-TiN the lowest in the pre-TaN device, is determined by double sweep fast I-V measurements. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectHafnium oxideen_US
dc.subjectFast I-Ven_US
dc.subjectGate fabricationen_US
dc.subjectNBTIen_US
dc.titleEffects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistorsen_US
dc.identifier.doi10.1016/j.tsf.2016.09.062en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume620en_US
dc.citation.spage43en_US
dc.citation.epage47en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000389611100008en_US
Appears in Collections:Articles