標題: Wavelength extension beyond 1.5 mu m in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy
作者: Ha, Neul
Mano, Takaaki
Wu, Yu-Nien
Ou, Ya-Wen
Cheng, Shun-Jen
Sakuma, Yoshiki
Sakoda, Kazuaki
Kuroda, Takashi
電子物理學系
Department of Electrophysics
公開日期: Oct-2016
摘要: By using a C-3v symmetric (111) surface as a growth substrate, we can achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled-photon emitters. Here, we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al, Ga) As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 mu m by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of the barrier choice. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.9.101201
http://hdl.handle.net/11536/132655
ISSN: 1882-0778
DOI: 10.7567/APEX.9.101201
期刊: APPLIED PHYSICS EXPRESS
Volume: 9
Issue: 10
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