標題: Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates
作者: Lee, YJ
Hsu, TC
Kuo, HC
Wang, SC
Yang, YL
Yen, SN
Chu, YT
Shen, YJ
Hsieh, MH
Jou, MJ
Lee, BJ
光電工程學系
Department of Photonics
關鍵字: GaN;InGaN;patterned sapphire substrate (PSS)
公開日期: 25-Sep-2005
摘要: InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the (1100)(sapphire) direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mseb.2005.05.019
http://hdl.handle.net/11536/13252
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2005.05.019
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 122
Issue: 3
起始頁: 184
結束頁: 187
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