標題: Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition
作者: Lan, S. M.
Uen, W. Y.
Chan, C. E.
Chang, K. J.
Hung, S. C.
Li, Z. Y.
Yang, T. N.
Chiang, C. C.
Huang, P. J.
Yang, M. D.
Chi, G. C.
Chang, C. Y.
光電工程學系
Department of Photonics
公開日期: 1-Jan-2009
摘要: Undoped zinc oxide (ZnO) thin films were deposited on Si (100) substrates by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD). After a nucleation layer of ZnO about 500 A... was deposited, top ZnO films with 320-440 nm in thickness were fabricated at temperatures varying from 450 to 600 A degrees C, respectively. X-ray diffraction analyses demonstrate that all the films grown have polycrystalline wurtzite structure. Scanning electron microscopy observations indicate that ZnO films grow with c-axis aligned grains when the deposition temperature is lower than 600 A degrees C. However, 3D microstructures without c-axis alignment were found when the film was deposited at 600 A degrees C. Room temperature photoluminescence (PL) spectra peaking at 3.27-3.29 eV were observed for the ZnO films grown at 450-600 A degrees C. However, only the spectrum from the film grown at 600 A degrees C could present a high intensity ratio of the ultraviolet band to deep-level emissions, which is above 392 and show a minimum full-width at half-maximum of 99 meV for the ultraviolet band. Temperature-dependent PL measurements from 20 to 300 K exhibited the luminescent mechanism of the present ZnO films to be near band excitonic emission.
URI: http://dx.doi.org/10.1007/s10854-008-9664-7
http://hdl.handle.net/11536/13222
ISSN: 0957-4522
DOI: 10.1007/s10854-008-9664-7
期刊: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume: 20
Issue: 
起始頁: 441
結束頁: 445
Appears in Collections:Conferences Paper


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