標題: Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectric
作者: Chiang, KC
Lai, CH
Chin, A
Wang, TJ
Chiu, HF
Chen, JR
McAlister, SP
Chi, CC
奈米科技中心
Center for Nanoscience and Technology
關鍵字: capacitor;RF metal-insulator-metal (MIM);TaTiO
公開日期: 1-十月-2005
摘要: A very high density of 23 fF/mu m(2) has been measured in RF metal-insulator-metal (MIM) capacitors which use high-kappa TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MINI capacitors should be useful for precision RF circuits.
URI: http://dx.doi.org/10.1109/LED.2005.856708
http://hdl.handle.net/11536/13216
ISSN: 0741-3106
DOI: 10.1109/LED.2005.856708
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 10
起始頁: 728
結束頁: 730
顯示於類別:期刊論文