標題: Phase transitions of Zn0.84Fe0.16Se under high-pressure
作者: Lin, CM
Chuu, DS
Chou, WC
Xu, JA
Huang, E
Hu, JZ
Pei, JH
電子物理學系
Department of Electrophysics
關鍵字: semiconductors;phase transitions;high pressure;synchrotron radiation
公開日期: 1998
摘要: The energy-dispersive X-ray-diffraction (EDXD) and Raman spectroscopy were employed to study the pressure induced phase transitions of Zn0.84Fe0.16Se crystal up to 21.0 and 32.0 GPa, respectively. A semiconductor-metal transition was identified by EDXD and Raman spectroscopic methods at 11.4 +/- 0.5 GPa. Other two phase transitions were found only in the Raman scattering study below 11.4 GPa. In addition, three unidentified Raman peaks were still observable above the metallization pressure. The existence of Fe impurity in the ZnSe up to a concentration of 0.16 reduced prominently the semiconductor-metal phase transition pressure. For Raman works, the three unidentified Raman peaks of Zn0.84Fe0.16Se above 10.9 GPa are possibly the TO modes in the thin surface of the high pressure metallic phase. (C) 1998 Elsevier Science Ltd. All rights reserved.
URI: http://hdl.handle.net/11536/132
ISSN: 0038-1098
期刊: SOLID STATE COMMUNICATIONS
Volume: 107
Issue: 5
起始頁: 217
結束頁: 221
顯示於類別:期刊論文


文件中的檔案:

  1. 000074407300004.pdf