標題: Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes
作者: Hsu, CY
Lan, WH
Wu, YCS
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: GaN;LEDs;ITO contact;leakage;dislocation
公開日期: 1-十月-2005
摘要: We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for p-type contacts. The current-voltage (I-V) characteristics of the devices have been studied. When annealed at 700 degrees C, the p-n junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in p-n junctions at high annealing temperatures.
URI: http://dx.doi.org/10.1143/JJAP.44.7424
http://hdl.handle.net/11536/13194
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.7424
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 10
起始頁: 7424
結束頁: 7426
顯示於類別:期刊論文


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  1. 000232739300044.pdf