標題: 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications
作者: Lai, YL
Chang, EY
Chang, CY
Chen, TK
Liu, TH
Wang, SP
Chen, TH
Lee, CT
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1996
摘要: A high-power-density dual-delta-doped AlGaAs/InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W, The 1 mu m gate-length HEMT exhibited a current density of 425 mA/mm at V-gs = 0.5 V, The maximum transconductance of the device was 270 mS/mm, The effective knee voltage was as low as 0.3 V, At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz, This is the highest power density of a dual-delta-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.
URI: http://dx.doi.org/10.1109/55.491838
http://hdl.handle.net/11536/1318
ISSN: 0741-3106
DOI: 10.1109/55.491838
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 17
Issue: 5
起始頁: 229
結束頁: 231
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UH51200013.pdf