標題: Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling
作者: Chen, JF
Hsiao, RS
Chen, YP
Wang, JS
Chi, JY
電子物理學系
Department of Electrophysics
公開日期: 3-Oct-2005
摘要: We present detailed studies of the onset of strain relaxation in InAs/InGaAs quantum dots. We show that the ground-state photoluminescence (PL) emission redshifts with increasing the InAs coverage before relaxation and blueshifts when relaxation occurs. PL spectra of the relaxed samples show two predominant families of dots with very different temperature-dependent efficiency. By comparison we show that the dots emitting at long wavelength are degraded by relaxation while the dots emitting at short wavelength remain coherently strained. Consequently, the PL spectra are dominated by the dots emitting at short wavelength, leading to the observed blueshift. This result suggests that the relaxation does not occur uniformly. In addition, we show that the relaxation occurs in the dot bottom interface. (C) 2005 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2081132
http://hdl.handle.net/11536/13170
ISSN: 0003-6951
DOI: 10.1063/1.2081132
期刊: APPLIED PHYSICS LETTERS
Volume: 87
Issue: 14
結束頁: 
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